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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1568 DESCRIPTION *With TO-126 package *Complement to type 2SA900 *Low collector saturation voltage APPLICATIONS *For low voltage type medium output power amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature Ta=25 CONDITIONS Open emitter Open base Open collector VALUE 18 18 5 1 2 1.2 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEsat VBEsat V(BR)CBO V(BR)CEO V(BR)EBO hFE-1 hFE-2 ICBO ICEO COB fT PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain DC current gain Collector cut-off current Collector cut-off current Output capacitance Transition frequency CONDITIONS IC=1A ;IB=50m A B 2SC1568 MIN TYP. MAX 0.5 1.2 UNIT V V V V V IC=0.5A ;IB=50m A IC=10A;IE=0 IC=1mA; IB=0 IE=10A; IC=0 IC=500mA ; VCE=2V IC=1.5A ; VCE=2V VCB=10V ; IE=0 VCE=18V ; IB=0 IE=0; VCB=6V; f=1MHz IE=-50mA ;VCB=6V;f=200MHz 12 150 18 18 5 90 50 280 1 10 A A pF MHz hFE-1 classifications Q 90-155 R 130-210 S 180-280 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1568 Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1568 4 |
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